CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy
in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Top View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 8A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.0
62.5
260
℃
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D(Max)
83
30
-55 to 150
320
℃
mJ
Value
8.0
24
±30
±40
V
V
W
Unit
A
2009/07/28
Rev. 1.2
Champion Microelectronic Corporation
Page 1
CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ORDERING INFORMATION
Part Number
CMT08N50GN220*
CMT08N50GN220FP*
CMT08N50XN220*
Package
TO-220
TO-220 Full Package
TO-220
CMT08N50XN220FP*
TO-220 Full Package
*Note :
G : Suffix for PB Free Product
X : Suffix for Halogen Free and PB Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT08N50
Typ
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 500 V, V
GS
= 0 V)
(V
DS
= 400 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 30 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= -30 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 4.0A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 8.0 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 4.0A) *
Input Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
(R
Go
+ C17n = 9.1Ω) *
Turn-Off Delay Time
Fall Time
Total Gate Charge
(V
DS
= 400 V, I
D
= 8.0 A,
Gate-Source Charge
V
GS
= 10 V)*
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(I
S
= 8.0 A, V
GS
= 0 V,
Forward Turn-On Time
d
IS
/d
t
= 100A/μs)
Reverse Recovery Time
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
Symbol
V
(BR)DSS
I
DSS
Min
500
Max
Units
V
μA
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
4.9
1450
190
45.4
15
33
40
32
40
8.0
17
4.5
7.5
2.0
1
3
100
100
4.0
0.7
7.2
nA
nA
V
Ω
V
mmhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
5.0
V
SD
t
on
t
rr
1.5
35
75
V
ns
ns
2009/07/28
Rev. 1.2
Champion Microelectronic Corporation
Page 2
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